The study, simulation and development of storage elements and devices with destructive and non-destructive readout on nanoscale ferroelectric films
The new technology of deposition of nanoscale (20-50 nm) ferroelectric films (NFF) for the non-volatile memory elements (ME), including the method of RF magnetron sputtering with closed drift of high-energy secondary electrons. Processed using the method and means of RF sputtering plazma monolithic ceramic targets based compounds zirconium, titanium, lead in the direction of reducing the thickness of the film, the technology of ultrasound treatment NFF, which provides an increase in the polarization reorientation and reduction of stress reversal.