Development of design tools and technology for the production of nonvolatile ferroelectric storage devices for high-performance critical-computer systems.
The use of slit high-frequency (HF) indirect cathode sources with indirect cooling of the target for the layer-by-layer deposition of the components on the substrate with their movement over the target surface is substantiated. Designs of sources for the deposition of ferroelectric film from zirconium-hafnium oxides and lead zirconate-titanate, focused on the use of targets with dimensions 68x30x5mm from powders of hafnium, zirconium, titanium, lead oxides, have been finalized.