Physical principles of creation of new elements of optically-electronic devices on a base mono- and nanoсrystallical silicon carbide
Physical and technological problems of creation of optical radiators and photodetectors, which use the phenomenon of electrical breakdown for its application in optical-electronic devices, are investigated. The usage of silicon carbide with its super-unique properties allows to solve the actual problem of creating of radiation stable, high temperature element basis for the systems of atomic industry, nuclear energy, military and space techniques.