Research methods development and definitions of the microwave characteristics of the latest isotropic and anisotropic materials and nanoscale films

Detailed test method developed thin dielectric resonator shown its advantages and suitability for study of the dielectric properties of anisotropic materials in thin layers. Very thin dielectric substrate, 0.1 mm thick with a dielectric constant ε > 10 can successfully act as a dielectric resonator (DR) and used for the measurement of microwave parameters of the materials by studying the spectra of thin DR. It is very important to measure thin films deposited on the substrate and is particularly important for the measurement of single-crystal substrates, which are mainly used for ferroelectric films with biaxial tensile or compressive stresses. In the case of "thick" films (above 100 nm thick), the stresses are attenuated, so special interest are very thin (20-100 nm), emerging ferroelectric films such as SrTiO3, EuTiO3, etc.

Calculation and experiment fully confirmed the possibility of using a thin dielectric resonator for the study of the dielectric properties of thin anisotropic materials in the microwave frequency range. The advantages of this method are obvious - it is possible to measure samples directly without special treatment - standard commercially available single-crystal substrates with dimensions 10х10х(0.1...0.5) mm. These substrates are used to form them thin nanoscale films, including strained. The developed method showed highly significant tenfold increase in the sensitivity of the method compared with counterparts and allows one cycle to measure the effective permittivity and permeability of the anisotropic crystal on the axes, including their temperature dependence.