This work is devoted to research of nanomaterials and nanostructures for creation of super-high speed and THz micro- and nanoelectronics components. Using of III-nitride wide gap materials opens new possibilities for creation on their basis low-dimensional semiconductor structures, which combine possibilities to get more fast-acting and more powerful electronic devices in comparison with existent A3B5 devices.
Estimations for the dynamical properties of tree-nitrides compounds (InN, GaN, AlN) were obtained, using semi-analytical expressions for momentum and energy mean free times in strong fields. Field-temperature dependences, occupation of the valleys, velocity-field charactistics in strong fields with different modifications of crystal lattice (cubic and hexagonal) were calculated. These results were compared with existent experimental data, calculated by other authors.