Investigation of the dynamic properties of the newest semicoductor nanomaterials and nanocomponents

1. State registration number of the theme - № 0113U000389, NTUU "KPI" - 2630-p.
2. Scientific adviser - prof. Timofeyev Volodymyr I.
3. The essence of development, the main results.

This work is devoted to research of nanomaterials and nanostructures for creation of super-high speed and THz micro- and nanoelectronics components. Using of III-nitride wide gap materials opens new possibilities for creation on their basis low-dimensional semiconductor structures, which combine possibilities to get more fast-acting and more powerful electronic devices in comparison with existent A3B5 devices.

The dynamic properties of semiconductor materials as reaction of drift processes on the impulsive electric field are investigated for InN, GaN and AlN with a cube and hexagonal structure. Lengths of ballistic motion are determined for different amplitudes and impulse durations. It is defined that maximum frequency which is determined the processes of impulse dispersion and intervalley transitions (but mostly by relaxation energy time) may be estimated how hundreds and thousands GHz, diminishing with growth of electric-field tension.
The mathematical models of components with a transversal and longitudinal quantum transport are created and quantum dimension effects which arise up in the components of nano electronics are investigated. Mathematical models based on power, electric field and transport of charge dependences are developed and the analysis of field-velocity characteristics of heterotransistor with two quantum wells and systems of quantum dots (QD) are fulfilled. The technique to consider the quantum dots influence on longitudinal charge carriers’ transport in heterotransistor has been. It is shown that embedding of the system of QD in heterojunction results in growth of fast-acting of heterotransistor.

The model of modern resonance-tunnel diodes is developed and verificated, including dynamic characteristics. The model of single-electron transistor, based on the molecule of fenildutiol is described and it allows to investigate physical processes and functioning regimes of transistor in the conditions of coulomb blockade and self-congruent electric-field. A method the analysis of light-emitting diodes characteristics is developed and their heterostructures are calculated. The mathematical model of quantum cascade laser is developed and it is investigational super lattice structure of semiconductor laser with a wave-length 5 micron.
The developed mathematical models are suitable for analysis and subsequent optimization of the active nanocomponents including properties of materials, topology of structures, parameters of heterojunctions and superlattices, quantum dots, tunnel barriers, nano size areas of structures, doping levels.

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