Investigation of the dynamic properties of the newest semicoductor nanomaterials and nanocomponents

This work is devoted to research of nanomaterials and nanostructures for creation of super-high speed and THz micro- and nanoelectronics components. Using of III-nitride wide gap materials opens new possibilities for creation on their basis low-dimensional semiconductor structures, which combine possibilities to get more fast-acting and more powerful electronic devices in comparison with existent A3B5 devices.