Timofeev Volodymyr Ivanovych

The subject of the research is the electrical and optoelectronic characteristics of triple AIIIBV compounds and based on them structures. The main attention was paid to the investigation of the dynamic characteristics of triple compounds in strong fields, the effects of
heating the electron gas and other effects, which are inherent in such nanosizes materials, as well as phenomena on the boundaries of low-dimensional structures with passive regions and contacts.

This work is devoted to research of nanomaterials and nanostructures for creation of super-high speed and THz micro- and nanoelectronics components. Using of III-nitride wide gap materials opens new possibilities for creation on their basis low-dimensional semiconductor structures, which combine possibilities to get more fast-acting and more powerful electronic devices in comparison with existent A3B5 devices.

Estimations for the dynamical properties of tree-nitrides compounds (InN, GaN, AlN) were obtained, using semi-analytical expressions for momentum and energy mean free times in strong fields. Field-temperature dependences, occupation of the valleys, velocity-field charactistics in strong fields with different modifications of crystal lattice (cubic and hexagonal) were calculated. These results were compared with existent experimental data, calculated by other authors.

Investigation of nanomaterials and prediction of ternary nitrides abilities was carries out for application in the development of ultrahighfrequency micro- and nanoelectronics components. Analysis of dynamical and highfrequency properties of ternary nitrides has shown the possibilities of its application for device development for frequencies up to the hundreds of gigahertz and formation of picosecond pulses.