Investigation of the novel semiconductor materials and compounds for implementation in the low-dimensional electron devices manufacturing technologies

Investigation of nanomaterials and prediction of ternary nitrides abilities was carries out for application in the development of ultrahighfrequency micro- and nanoelectronics components. Analysis of dynamical and highfrequency properties of ternary nitrides has shown the possibilities of its application for device development for frequencies up to the hundreds of gigahertz and formation of picosecond pulses.

Mathematical models for analysis of the dynamical properties of resonant-tunneling diodes were developed; application were developed intended for analysis and visualization of characteristics and design of resonant-tunneling diodes for superlattices nano structures.

Modeling of electrical parameters of the low-dimensional structures was carried out, incl. double-junction field-effect heterotrsnsistors and quantum dot transistors.

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