This work is devoted to research of nanomaterials and nanostructures for creation of super-high speed and THz micro- and nanoelectronics components. Using of III-nitride wide gap materials opens new possibilities for creation on their basis low-dimensional semiconductor structures, which combine possibilities to get more fast-acting and more powerful electronic devices in comparison with existent A3B5 devices.
Nanoelectronic signal processing devices based on crystal-like structures are the newest element base of information and telecommunication systems. Resonant-tunneling crystal-like structures and devices based on them with very high spectral selectivity are proposed. High-performance microwave microstrip signal processing devices are developed. To improve the efficiency crystal-like structures used in the modes conventional tunneling - resonant tunneling. Together, these effects provide maximum decoupling of signals in the passband and stopband.
Mathematical models of the positional error in working place of technological equipment are creative. Dependence of the spatial error of the positional of cutting tool and detail at occurrence in coordinate system is defined. Properly this severely have an influence on accuracy for the production precision details. Mathematical models and expediency theirs use at creation of express-system of the positional error definition are creative. Properly mathematical models of the zonal precision, as well as principles and guidelines of this used in technological processes.