Design of processing technique reception and research of features application porous and nanoporous silicon for creation highly effective nanostructural photo-electric converters

Designed and implemented technology of nanoporous silicon. A basic principles and criteria of structural and technological parameters of photovoltaic cells combined type of inversion channel (value embedded positive charge in the dielectric, the density of surface states at the insulator-semiconductor boundary, the depth of electron-hole transition doping level domains base and emittera). Reached high values of the coefficient of performance (22-24,5%) at a value of embedded positive charge over 2,5·10-2 Кл/м2, the density of surface states on the border insulator - semiconductor least 1015 еВ-1м-2 and depth n+ - region 3 microns. Dependence electrical, optical, photovoltaic, luminescent, porous thermoelectric properties, nanoporous silicon heterostructures based on them the size of the nanocrystals, and porosity of the material. With dimensions of nanocrystals 15-18 nm reached a maximum intensity of photoluminescence and photoresponse heterojunctions. The basic laws of formation of porous layers and nanoporous silicon. Determined that stable hydrogen content in the surface region to 3 microns provides passivation and lower surface recombination velocity. Found that a layer of porous silicon textured surface begins to form only between the pyramids along the base. By increasing the time of forming the coverage area of porous silicon increases. Control Techniques antyvidbyvayuchymy and photoluminescence properties of photovoltaic cells.

Технологічне обладнання
Microsoft Office document icon 2427-p.doc456 KB