Yakymenko Yuriy I.

Algorithmic and technological approaches to the technological-constructive and algorithmic-software integration of the complex of navigation-visual modules and sensors are determined. A patent information study was carried out on a number of technical and technological solutions. A physical and mathematical model for solving navigation problems with the structure of a local navigation positional system has been developed. Optimal design parameters and operating modes of robotic platforms for a local navigation system have been developed.

The design of the 2-axis Sun angular coordinates determination device based on the
monocrystalline silicon and on the nanostructured silicon films have been developed.
Calculations of the design parameters of the sensors are given taking into account the linearization of the output characteristic based on the factors of the incident power loss with the incidence light angle increasing and the incidence angle dependence of the light spot displacement.

Integrated optimization of production technology of radiation-resistant solar cells based on the A3B5 heterojunctions, on the single-crystal silicon as well as on the nanocrystalline silicon films doped with rare earth elements formed by the method of synthesis of nanocrystalline silicon thin-film layers. Technological operations for manufacturing of high-performance radiation-resistant nanocrystalline silicon thin film solar cells and the A3B5 heterojunction solar cells have been developed and practically realized.

Designed and implemented technology of nanoporous silicon. A basic principles and criteria of structural and technological parameters of photovoltaic cells combined type of inversion channel (value embedded positive charge in the dielectric, the density of surface states at the insulator-semiconductor boundary, the depth of electron-hole transition doping level domains base and emittera).

Developed and implemented technological scheme of low-temperature synthesis of nanocrystalline silicon films. The method of thermal vacuum deposition in a stream of high-energy electrons. Theoretical model of the thin-film photovoltaic based nanocrystalline silicon (nc-Si). The model takes into account the three-dimensional distribution of potential barriers.

Past studies of the structure and physico-chemical characteristics of thin films of aluminum nitride (AlN) to create a functional MEMS structures. For the first time fulfilled technological regimes of synthesis of aluminum nitride oriented films by reactive magnetron sputtering on to ¬ uous stream using a mixture of ammonia and nitrogen and argon, which allowed to increase the synthesis of nitride compounds.