Топологія електродів комірки

Design processing technique of reception focused films of nitride aluminium with piezoelectric properties for organization functional MEMS-structures in nanoelectronic meshes.

Past studies of the structure and physico-chemical characteristics of thin films of aluminum nitride (AlN) to create a functional MEMS structures. For the first time fulfilled technological regimes of synthesis of aluminum nitride oriented films by reactive magnetron sputtering on to ¬ uous stream using a mixture of ammonia and nitrogen and argon, which allowed to increase the synthesis of nitride compounds.