Самофалов К.Г.

The creation of the design and manufacture of integrated circuits ferroelectric memory

The new research technology to deposition of submicron (20-100 nm) ferroelectric thin films (FTF) for acoustic-volatile ferroelectric storage elements. Improved equipment for deposition and etching of FTF on silicon substrates with CMOS structures and construction of cathode with a circular target and disk fragments, which ensures uniform thickness and composition of FTF during their deposition method ion-plazmа sputtering in magnetron-type reactor with closed drift of electrons.