Investigation of modern semiconductor nanodevices and nanocomponents of integral circuits, based on 1D and 2D structures
Estimations for the dynamical properties of tree-nitrides compounds (InN, GaN, AlN) were obtained, using semi-analytical expressions for momentum and energy mean free times in strong fields. Field-temperature dependences, occupation of the valleys, velocity-field charactistics in strong fields with different modifications of crystal lattice (cubic and hexagonal) were calculated. These results were compared with existent experimental data, calculated by other authors.