Технологія

The use of slit high-frequency (HF) indirect cathode sources with indirect cooling of the target for the layer-by-layer deposition of the components on the substrate with their movement over the target surface is substantiated. Designs of sources for the deposition of ferroelectric film from zirconium-hafnium oxides and lead zirconate-titanate, focused on the use of targets with dimensions 68x30x5mm from powders of hafnium, zirconium, titanium, lead oxides, have been finalized.

1.A new technology has been developed and new designs of devices for the manufacture of intelligent polymer composite materials (PKMM), incl. using ultrasound (US), for energy-efficient and high-performance production of products from intelligent polymer materials (IPM) on their basis.

The design of the 2-axis Sun angular coordinates determination device based on the
monocrystalline silicon and on the nanostructured silicon films have been developed.
Calculations of the design parameters of the sensors are given taking into account the linearization of the output characteristic based on the factors of the incident power loss with the incidence light angle increasing and the incidence angle dependence of the light spot displacement.

It is conducting preliminary studies and conducted experimental verification of the effectiveness of producing traditional and nano-modified carbon nanotubes reaktoplastichnih polymer composite materials by the determined application of low-frequency ultrasonic cavitation. A new procedure for the preparation of traditional and nano-modified reaktoplastichnyh polymer composites with the low-frequency ultrasonic cavitation.

It resolves an important economic problems associated with the scientific substantiation of energy saving processes and equipment for reactors plasticity improved quality of products, including special purpose epoxy compositions based polymers, fiber reinforced fillers in combination ultrasonic action, as well as the prediction of physical and mechanical properties of the resulting products.

Integrated optimization of production technology of radiation-resistant solar cells based on the A3B5 heterojunctions, on the single-crystal silicon as well as on the nanocrystalline silicon films doped with rare earth elements formed by the method of synthesis of nanocrystalline silicon thin-film layers. Technological operations for manufacturing of high-performance radiation-resistant nanocrystalline silicon thin film solar cells and the A3B5 heterojunction solar cells have been developed and practically realized.